IRF7204【PDF 2/9 页】MOSFET P-CH 20V 5.3A 8-SOIC

您好，
买卖IC网欢迎您。
请登录
免费注册

1页 [2页]3页 4页 5页 6页

IRF7204

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

Parameter

Min.

Typ. Max. Units

Conditions

V (BR)DSS

Drain-to-Source Breakdown Voltage

-20

––– ––– V V GS = 0V, I D = -250μA

? V (BR)DSS / ? T J

Breakdown Voltage Temp. Coefficient

–––

-0.022 ––– V/°C

Reference to 25°C, I D = -1mA

?

––– -25 V DS = -16V, V GS = 0V

––– -100 V GS = -12V

100 150 R G = 6.0 ?

R DS(ON)

V GS(th)

g fs

I DSS

I GSS

Q g

Q gs

Q gd

t d(on)

t r

t d(off)

t f

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

–––

–––

-1.0

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

––– 0.060 V GS = -10V, I D = -5.3A ?

––– 0.10 V GS = -4.5V, I D = -2.0A ?

––– -2.5 V V DS = V GS , I D = -250μA

7.9 ––– S V DS = -15V, I D = -5.3A ?

μA

––– -250 V DS = -16V, V GS = 0V, T J = 125 °C

nA

––– 100 V GS = 12V

25 ––– I D = -5.3A

5.0 ––– nC V DS = -10V

8.0 ––– V GS = -10V ?

14 30 V DD = -10V

26 60 I D = -1.0A

ns

68 100 R D = 10 ? ?

D

L D

L S

Internal Drain Inductance

Internal Source Inductance

–––

–––

2.5

4.0

–––

–––

nH

Between lead,6mm(0.25in.)

from package and center

of die contact

G

S

C iss

Input Capacitance

–––

860

–––

V GS = 0V

C oss

C rss

Output Capacitance

Reverse Transfer Capacitance

–––

–––

750

230

–––

–––

pF

V DS = -10V

? = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I S

I SM

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) ?

––– ––– -2.5

––– ––– -15

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

G

D

S

V SD

Diode Forward Voltage

––– –––

-1.2 V T J = 25°C, I S = -1.25A, V GS = 0V ?

t rr

Q rr

t on

Notes:

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– 85 100 ns T J = 25°C, I F = -2.4A

––– 77 120 nC di/dt = 100A/μs ?

Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )

? Repetitive rating; pulse width limited by

max. junction temperature.

? I SD ≤ -5.3A, di/dt ≤ 90A/μs, V DD ≤ V (BR)DSS ,

T J ≤ 150°C

? Pulse width ≤ 300μs; duty cycle ≤ 2%.

? Surface mounted on FR-4 board, t ≤ 10sec.

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

IRF7207TR MOSFET P-CH 20V 5.4A 8-SOIC

IRF720 MOSFET N-CH 400V 3.3A TO-220AB

IRF7220 MOSFET P-CH 14V 11A 8-SOIC

IRF7233TR MOSFET P-CH 12V 9.5A 8-SOIC

IRF730ASTRRPBF MOSFET N-CH 400V 5.5A D2PAK

IRF7321D2TR MOSFET P-CH 30V 4.7A 8-SOIC

IRF7322D1TR MOSFET P-CH 20V 5.3A 8-SOIC

IRF7324D1TR MOSFET P-CH 20V 2.2A 8-SOIC

相关代理商/技术参数

IRF7204PBF 功能描述:MOSFET 20V 1 N-CH HEXFET 60mOhms 25nC RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

IRF7204TR 功能描述:MOSFET P-CH 20V 5.3A 8-SOIC RoHS:否类别:分离式半导体产品 >> FET - 单系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔封装/外壳:TO-220-3 整包供应商设备封装:TO-220FP 包装:管件

IRF7204TRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC T/R

IRF7204TRPBF 功能描述:MOSFET MOSFT PCh -20V -5.3A 60mOhm 25nC RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

IRF7205 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 4.6A 8-Pin SOIC 制造商:International Rectifier 功能描述:MOSFET P LOGIC SO-8

IRF7205PBF 功能描述:MOSFET 1 P-CH -30V HEXFET 70mOhms 27nC RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

IRF7205TR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 4.6A 8-Pin SOIC T/R

IRF7205TRPBF 功能描述:MOSFET MOSFT PCh -30V -4.6A 70mOhm 27nC RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube